Edram mit Verstärkungszelle und Erweiterter Kapazität

Details

Veröffentlichungs-Nr.

EP4766063

Anmeldetag

24. Juni 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

A gain cell memory device includes a semiconductor device layer of a silicon on insulator (SOI) substrate comprising an active region, a storage transistor over the active region of the semiconductor device layer, an isolation structure between a gate electrode of the storage transistor and a source/drain region adjacent to the storage transistor, the isolation structure extending through the active region such that a first portion of the active region is isolated from a second portion of the active region, and a capacitor coupled to the storage transistor. A bottom plate of the capacitor comprises the first portion of the active region, a gate dielectric layer of the storage transistor is an insulator of the capacitor, and a top plate of the capacitor comprises the gate electrode of the storage transistor and a metal structure over the gate electrode.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA