Bipolare Transistoren mit einem Gemeinsamen Extrinsischen Basisbereich

Details

Veröffentlichungs-Nr.

EP4766074

Anmeldetag

24. Juni 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

The present disclosure relates to heterojunction bipolar transistors with a common extrinsic base, and methods of manufacture. The structure includes: a first transistor (100) having an intrinsic base (14a), an extrinsic base (12a) and an emitter (32a); and a second transistor (200) having an intrinsic base (14b), an extrinsic base (12b) and an emitter (32b). The extrinsic base (12a) of the first transistor and the extrinsic base (12b) of the second transistor have a common extrinsic base region (12a, b, c) with a first dopant type for the first transistor and a second opposite dopant type for the second transistor.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA