Strukturen für einen Transistor mit Hoher Elektronenmobilität

Details

Veröffentlichungs-Nr.

EP4766079

Anmeldetag

24. Juni 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

Structures for a high-electron-mobility transistor and methods of forming such structures. The structure comprises a layer stack including an active region, and a dielectric layer on the active region of the layer stack. The active region has a perimeter. The dielectric layer includes an opening and portions between the opening and the perimeter of the active region. The structure further comprises a source/drain region inside the opening in the dielectric layer.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA