Komplementäre Metalloxidhalbleiter-Feldeffektanordnung

Details

Veröffentlichungs-Nr.

EP4766081

Anmeldetag

19. Dezember 2024

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

The present invention provides a complementary metal-oxide-semiconductor (CMOS) field effect device comprising a substrate; a first n-doped S/D region and a second n-doped S/D region; a first p-doped S/D region and a second p-doped S/D region; a first channel layer arranged above the substrate, the first channel layer comprising: a first sub-layer and a second sub-layer; wherein the first and second n-doped S/D regions are arranged at a first lateral side of the first channel layer, and the first and second p-doped S/D regions are arranged at a second lateral side of the first channel layer, the second lateral side being opposite to the first lateral side; wherein a conduction band edge of the first sub-layer has an energy below a conduction band edge of the second sub-layer; and wherein a valence band edge of the first sub-layer has an energy below a valence band edge of the second sub-layer; and a gate structure abutting the first and second sublayers of the first channel layer.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien