Lichtemittierendes Nitridhalbleiterelement

Details

Veröffentlichungs-Nr.

EP4766105

Anmeldetag

16. Dezember 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

A light-emitting element includes: a first semiconductor portion including a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and configured to emit ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion including a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and configured to emit ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer and containing Al and a p-type impurity. The second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer and containing Al and a p-type impurity.

Anmelder

Firma

NICHIA CORPORATION

Land

🇯🇵 Japan