Von Unten nach Oben Verlaufende Plattierung von Kontaktlöchern durch Glas

Details

Veröffentlichungs-Nr.

EP4766144

Anmeldetag

17. Oktober 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

IPC

H10W70/692, H10W70/63

Abstract

Various techniques, as well as related devices and methods, for performing metallization of through-glass vias (TGVs) in glass substrates using bottom-up plating are disclosed. A first technique is based on using subtractive etch. A second technique is based on using modified semi-additive process. A third technique is based on using flowable materials to fill a cavity in a glass substrate alongside performing bottom-up plating. Any of these techniques may further be modified by including a liner on sidewalls of TGVs to serve as a buffer layer between the glass substrate and conductive material(s) in the TGVs.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA

Fachgebiete