Verfahren zum Schneiden von Siliziumwafern und Siliziumwafer

Details

Veröffentlichungs-Nr.

EP4768212

Anmeldetag

19. Dezember 2024

Veröffentlichung

26. Juni 2025

Rechtsraum

EP

IPC

B28D5/04, B28D5/00, B28D1/06

Abstract

The present application provides a dicing method for a silicon wafer and a silicon wafer. The dicing method for a silicon wafer includes: providing a silicon rod and a carrier board; driving the silicon rod to move downward relative to dicing wires, to obtain a plurality of silicon wafers by dicing the silicon rod; and lifting the silicon wafers upward relative to the dicing wire, and controlling the dicing wires in contact with the silicon wafers to cyclically move in a forward direction and a reverse direction alternately during the lifting of the silicon wafers. The silicon wafer has a first group of opposite edges and a second group of opposite edges. The first group of opposite edges includes a first edge and a second edge opposite to each other. The second group of opposite edges includes a third edge and a fourth edge opposite to each other. The first edge and/or the second edge intersect with the third edge and/or the fourth edge. A surface of the silicon wafer has two groups of scratches. One group of scratches is inclined toward the third edge in a first direction. The other group of scratches is inclined toward the fourth edge in the first direction. The first direction is a direction from the first edge to the second edge. The present application can reduce a case in which the silicon wafers are dropped when the silicon wafers are lifted upward, and has advantages of a high lifted upward acceleration, high surface quality of the silicon wafers, and a small secondary damage.

Anmelder

Firma

LONGi Green Energy Technology Co., Ltd.

Land

🇨🇳 China

Fachgebiete