Verfahren zur Steuerung der Spannungsvariation in einer Schicht mit Siliciumoxycarbid, das mittels Plasmaverstärkter Chemischer Dampfabscheidung gebildet Wird

Details

Veröffentlichungs-Nr.

EP4768624

Anmeldetag

16. Juni 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

C23C16/30, C23C16/509

Abstract

A method of controlling stress variation in a layer comprising silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system, is disclosed. The method comprises the steps of: - providing a chamber comprising a platen for supporting a substrate; - placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen; - introducing a gas comprising oxygen into the chamber; - introducing trimethylsilane gas into the chamber; - generating a plasma within the chamber; - maintaining a temperature at which deposition takes place to less than 275°C; - maintaining a pressure within the chamber in the range 1.5-3Torr; - depositing the layer upon the substrate with a deposition rate >1.5µm/minute.

Anmelder

Firma

SPTS Technologies Limited

Land

🇬🇧 Großbritannien

Fachgebiete