Ferroelektrische Spin-Orbit-Speicherzellen und Matrix für Speicher-, Ai- und Imc-Anwendungen

Details

Veröffentlichungs-Nr.

EP4769407

Anmeldetag

24. Dezember 2024

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

G11C11/22

Abstract

The invention has for object a memory cell (100) comprising a spin-orbit ferroelectric memory (110) comprising a first, second and third terminals (121, 122, 123), the memory (110) having a spontaneous electrical polarisation able to adopt two distinct states, the first, second, and third terminals (121, 122, 123) being connected to the memory in a way that a first charge current flows (11) in the second terminal (122) when a voltage is applied between the first and third terminals (121, 123), the amplitude and sign of the charge current being function of the voltage applied between the first and third terminals (121, 123) and function of the spontaneous electrical polarisation. The cell (100) comprises an isolation component (130) connected to the second terminal (122) and configured to prevent charge currents from flowing in the second terminal (122) towards the memory (110) when no voltage is applied between the first and third terminals (121, 123) and to allow charge currents to flow in the second terminal and from the memory when a voltage is applied between the first and third terminals (121, 123).

Anmelder

Firmen

Commissariat à l'Energie Atomique et aux Energies Alternatives
Centre National de la Recherche Scientifique
Université Grenoble Alpes
Institut Polytechnique de Grenoble

Land

🇫🇷 Frankreich

Fachgebiete