Halbleiterspeicheranordnung

Details

Veröffentlichungs-Nr.

EP4769408

Anmeldetag

8. Juli 2024

Veröffentlichung

27. Februar 2025

Rechtsraum

EP

IPC

G11C11/22

Abstract

A semiconductor storage apparatus according to an embodiment of the present technology includes a control section. The control section that controls write intensity of writing to a user area included in a memory area, on the basis of a number of times of access to the user area. Thereby, the write intensity is increased when the value of a counter linked with the number of times of access to the user area has exceeded a predetermined number of times, and this makes it possible to achieve extended product lifetime of the semiconductor storage apparatus using ferroelectric memory cells. In addition, the semiconductor storage apparatus is robust against variations in memory initial characteristics and deterioration, and the trade-off between the endurance and the retention after control processes can be eliminated. In addition, recovery enables the maintenance of the read margin, and the endurance and the retention can be enhanced.

Anmelder

Firma

Sony Semiconductor Solutions Corporation

Land

🇯🇵 Japan

Fachgebiete