Verfahren zum Plasmaschneiden

Details

Veröffentlichungs-Nr.

EP4769487

Anmeldetag

6. Juni 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

H01L21/78, H01L21/308

Abstract

According to the invention there is provided a method of plasma dicing a workpiece comprising a compound semiconductor substrate, the method comprising:providing a workpiece comprising a compound semiconductor substrate;providing a mask structure on the workpiece, the mask structure comprising an upper layer comprising a hard mask material and a lower release layer between the upper layer and the front side of the workpiece, wherein the mask structure defines one or more dicing lanes; andplasma dicing the workpiece by a process which comprises plasma etching at least partially through the compound semiconductor substrate along the dicing lanes.

Anmelder

Firma

SPTS Technologies Limited

Land

🇬🇧 Großbritannien

Fachgebiete