Dreidimensionale Speichervorrichtungen

Details

Veröffentlichungs-Nr.

EP4770310

Anmeldetag

2. März 2023

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

H10B43/27

Abstract

Embodiments of 3D memory devices and methods for forming the same are disclosed. In one example, a 3D memory device includes a multi-layer stacked structure, where the multi-layer stacked structure includes a plurality of alternately stacked conductive layers and dielectric layers. The 3D memory device further includes a semiconductor layer over the multi-layer stacked structure, and a plurality of channel structures penetrating into the multi-layer stacked structure and the semiconductor layer. A first end of each channel structure is located within the semiconductor layer, and the first ends of the channel structures are aligned with one another.

Anmelder

Firma

Yangtze Memory Technologies Co., Ltd.

Land

🇨🇳 China

Fachgebiete