Verfahren zur Fehlerkorrektur in Photolithographischen Masken mit Örtlich Getrennten Dichteänderungen

Details

Veröffentlichungs-Nr.

EP4776065

Anmeldetag

25. Juli 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

IPC

G03F1/72, G03F7/20

Abstract

The present invention relates to a method of correcting placement errors on and/or optical transmission errors of a photolithographic mask (1) for a projection exposure apparatus for microlithography comprising a substrate (2) and photolithographic imaging structures (3,23) formed on the substrate, in which method a laser beam (5,25) is used to introduce into the substrate (2) a plurality of local density variations each defining a pixel (4,24), in order to correct placement errors of the structures and/or optical transmission errors, wherein the pixels are introduced in at least two separately arranged pixel arrangement regions which are arranged outside a centre plane (8) of the substrate (2,22) or the mask (1,20), the pixels (4, 24) being arranged in the pixel arrangement regions in such a way that, with a defined correction of placement errors on and/or of optical transmission errors of the mask (1, 20), an undesired change in shape of the mask (1, 20) is minimised by the introduction of the local density changes..

Anmelder

Firma

Carl Zeiss SMS Ltd.

Land

🇮🇱 Israel

Fachgebiete