Transistoren mit Hoher Elektronenmobilität mit Feldplatte

Details

Veröffentlichungs-Nr.

EP4776786

Anmeldetag

9. Juli 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to high-electron-mobility transistors with field plates and methods of manufacture. The structure includes: a gate structure on a semiconductor substrate; a passivation layer adjacent to the gate structure and above the semiconductor substrate; an insulator material over the passivation layer; and a field plate comprising a first portion contacting the passivation layer and a second portion being separated from the passivation layer by the insulator material.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA