Säulengraben-Leistungs-Mosfet und Verfahren zu dessen Herstellung

Details

Veröffentlichungs-Nr.

EP4776788

Anmeldetag

10. Januar 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

In some examples, a method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) comprises forming multiple pillar trenches in a semiconductor substrate, wherein each pillar trench comprises a pillar trench source electrode and a field oxide material surrounding the source electrode, recessing the field oxide material in an upper portion of each pillar trench, whereby to form a recessed portion, and filling the recessed portion with a gate electrode, whereby to form a pillar trench gate electrode, forming multiple shallow trenches in a mesa region, wherein the mesa region comprises a region between two neighbouring pillar trenches, wherein each shallow trench comprises a shallow trench gate electrode, and wherein the shallow trench gate is formed by recessing the semiconductor substrate in the mesa region to define the shallow trench, and filling the shallow trench with a gate electrode material, whereby to form the shallow trench gate electrode, electrically connecting the pillar trench gate electrodes to the shallow trench gate electrodes via a gate pick-up, selectively converting at least one of the multiple pillar trenches, the shallow trenches, or both the multiple pillar trenches and the shallow trenches into a MOS diode structure by: replacing the pillar trench gate electrode, the shallow trench gate electrode, or both the pillar trench gate electrode and the shallow trench gate electrode, respectively, with a further source electrode, and forming a gate dielectric in the MOS diode structure.

Anmelder

Firma

Huawei Technologies Co., Ltd.

Land

🇨🇳 China