Photoelektrisches Umwandlungselement, Photoelektrische Umwandlungsvorrichtung und Ausrüstung

Details

Veröffentlichungs-Nr.

EP4776796

Anmeldetag

8. Januar 2026

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

IPC

H10F39/12, H10F39/00

Abstract

A photoelectric conversion element (22), provided in a semiconductor layer (120) having a first face (122) and a second face (124), includes a first semiconductor region (126) of a first conductivity type arranged over a first depth (D3) from the first face, a second semiconductor region (136) of a second conductivity type arranged to surround the first semiconductor region in a plan view and having a peak of an impurity concentration at a second depth between the first face and the first depth, and a third semiconductor region (128) of the second conductivity type arranged closer to the second face than the first semiconductor region to the second face and configuring an avalanche photodiode with the first semiconductor region. A boundary face of the second semiconductor region on a side of the second face is located closer to the first face than the first depth to the first face.

Anmelder

Firma

Canon Kabushiki Kaisha

Land

🇯🇵 Japan

Fachgebiete