Verfahren zur Verarbeitung von Halbleiterbauelementen

Details

Veröffentlichungs-Nr.

EP4776799

Anmeldetag

9. Januar 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

IPC

H10H20/01, H10H29/03

Abstract

A method of processing semiconductor devices, comprising: providing a donor substrate (1) comprising a donor layer (3) having multiple semiconductor devices (7) adjacent to each other, the donor layer (3) arranged on a surface of the donor substrate (1); positioning a receiver substrate (5) opposite the donor substrate (1), with the donor layer facing the receiver substrate (5); and introducing energy at the interface between the donor substrate (1) and the donor layer (3) in an area that corresponds to at least one semiconductor device (7) to detach the at least one semiconductor device (7) of the multiple semiconductor devices (7) from the donor layer (1) and depositing the detached semiconductor device (7) on a target location of the receiver substrate (5).

Anmelder

Firma

QubeDot GmbH

Land

🇩🇪 Deutschland

Fachgebiete