Halbleiterspeicheranordnung

Details

Veröffentlichungs-Nr.

EP4779640

Anmeldetag

2. September 2024

Veröffentlichung

20. März 2025

Rechtsraum

EP

Abstract

A semiconductor storage device according to one embodiment of the present disclosure includes: a first via provided in a path coupling a first coupling terminal and a coupling node to each other, the first via being configured to irreversibly come into a high resistance state by passage of current therethrough; a second via provided in a path coupling the coupling node and a second coupling terminal to each other, the second via being configured to irreversibly come into a high resistance state by passage of current therethrough; a third via provided in a path coupling the coupling node and a third coupling terminal to each other, the third via being configured to irreversibly come into a high resistance state by passage of current therethrough; and a write circuit coupled to the first coupling terminal, the second coupling terminal, and the third coupling terminal, the write circuit being configured to allow a write current to flow bidirectionally between the first coupling terminal and the second coupling terminal, and configured to allow the write current to flow bidirectionally between the first coupling terminal and the third coupling terminal.

Anmelder

Firma

Sony Semiconductor Solutions Corporation

Land

🇯🇵 Japan