Nichtflüchtige Speichervorrichtung, Elektronische Vorrichtung damit und Verfahren zur Herstellung der Nichtflüchtigen Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4780159

Anmeldetag

27. Oktober 2025

Veröffentlichung

22. Juli 2026

Rechtsraum

EP

IPC

H10B43/27

Abstract

Provided are a nonvolatile memory device, an electronic device including the same, and a method of manufacturing the nonvolatile memory device. A nonvolatile memory device includes a substrate, a plurality of separators and a plurality of gate electrodes alternately stacked in a first direction perpendicular to the substrate, the plurality of separators and the plurality of gate electrodes including a channel hole passing therethrough in the first direction, a charge blocking layer inside the channel hole, a charge tunneling layer inside the charge blocking layer, a channel layer inside the charge storage layer, and a plurality of charge storage particles spaced apart from each other between the charge blocking layer and the charge tunnel layer.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete