Hochfrequenzschaltung und Hochfrequenzschaltungsmodul

Details

Veröffentlichungs-Nr.

EP4780164

Anmeldetag

7. August 2024

Veröffentlichung

20. März 2025

Rechtsraum

EP

IPC

H10D84/03, H10D84/00

Abstract

A high-frequency circuit according to the present technology includes: a base substrate; an insulating layer; a first terminal; a circuit element; a second terminal; and a bypass via. The base substrate is electrically connected to a ground, and is made of a semiconductor material. The insulating layer is provided to the base substrate. The first terminal is provided to the insulating layer, and a high-frequency signal in a predetermined high-frequency band is input to the first terminal. The circuit element is provided to the insulating layer, and is electrically connected to the first terminal. The second terminal is provided to the insulating layer, and is electrically connected to the circuit element, and the high-frequency signal that is input to the first terminal and that flows through the circuit element is output from the second terminal. The bypass via electrically connects the first terminal or the second terminal and the base substrate to each other, and forms a bypass path for a low-frequency signal in a frequency band lower than the predetermined high-frequency band.

Anmelder

Firma

Sony Semiconductor Solutions Corporation

Land

🇯🇵 Japan

Fachgebiete