Mess- und Prüfvorrichtung für Materialschicht mit Dreidimensionalen Nanostrukturen, Verfahren zur Herstellung eines Halbleiterbauelements damit und Verfahren zur Durchführung von Mess- und Inspektion

Details

Veröffentlichungs-Nr.

EP4782828

Anmeldetag

16. Januar 2026

Veröffentlichung

29. Juli 2026

Rechtsraum

EP

IPC

G01N29/04, G01N29/06

Abstract

A metrology and inspection apparatus for a material layer including a three-dimensional nanostructure, a method of manufacturing a semiconductor device using the same, and a method of performing a metrology and inspection are provided. The metrology and inspection apparatus according to an example embodiment includes a first ultrasonic transducer configured to emit ultrasonic waves to a metrology and inspection target, and a substrate holder that is spaced apart from the first ultrasonic transducer and includes a surface facing the first ultrasonic transducer, wherein the first ultrasonic transducer and the substrate holder are under a high-pressure gas atmosphere higher than atmospheric pressure.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete