Verfahren zur Herstellung von Ionenfallen

Details

Veröffentlichungs-Nr.

EP4783075

Anmeldetag

3. Mai 2024

Veröffentlichung

29. Juli 2026

Rechtsraum

EP

IPC

G06N10/40, H05K1/11, G21K1/00

Abstract

An ion trap device includes a dielectric substrate and a via hole extending through the dielectric substrate from a first main surface of the dielectric substrate to a second main surface of the dielectric substrate. The ion trap device further includes an electrically conductive etch stop layer arranged on the first main surface of the dielectric substrate, wherein the etch stop layer covers the via hole. The ion trap device further includes a metal layer of an ion trap at least partially arranged on the etch stop layer and an electrically conductive material arranged in the via hole, wherein the etch stop layer electrically couples the electrically conductive material and the metal layer.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete