Photodiode und Elektronische Vorrichtung damit

Details

Veröffentlichungs-Nr.

EP4783780

Anmeldetag

20. Januar 2026

Veröffentlichung

29. Juli 2026

Rechtsraum

EP

Abstract

An optical sensing element may include: a substrate; a first silicon semiconductor layer on the substrate in a first direction; a second silicon semiconductor layer on the substrate in the first direction, and spaced apart from the second silicon semiconductor layer in the first direction; and a germanium semiconductor layer between the first silicon semiconductor layer and the second silicon semiconductor layer, the germanium semiconductor layer comprising germanium, wherein the first silicon semiconductor layer comprises: a first region comprising an intrinsic silicon semiconductor, a second region comprising a silicon semiconductor doped with a first conductivity type dopant, and wherein the germanium semiconductor layer comprises an intrinsic germanium semiconductor, and an entirety of the intrinsic germanium semiconductor of the germanium semiconductor layer does not include a dopant.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea