Halbleiterschaltkreis und Steuerverfahren dafür

Details

Veröffentlichungs-Nr.

EP4790901

Anmeldetag

10. Februar 2025

Veröffentlichung

12. August 2026

Rechtsraum

EP

IPC

H03K17/0814, H03K17/12

Abstract

The invention relates to a semiconductor switching circuit (1) and a method to control thereof. The semiconductor switching circuit (1) comprises a plurality of semiconductor switches (11) connected in parallel and each com-prising a gate (111) and a collector (112), and at least one circuit protection component (13) having a current increasable impedance, wherein the gates (111) of the plurality of semiconductor switches (11) are connect-ed in series with the at least one circuit protection component (13), and in response to a failure of at least one of the plurality of semiconductor switches (11), a driving current of the respective gate (111) connected to the at least one circuit protection component (13) increases the impedance of the at least one circuit protection component (13).

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz

Fachgebiete