Transistorsubstrat, Elektronische Vorrichtung damit und Verfahren zur Herstellung des Transistorsubstrats

Details

Veröffentlichungs-Nr.

EP4791147

Anmeldetag

18. November 2025

Veröffentlichung

12. August 2026

Rechtsraum

EP

IPC

H10D30/67, H10D86/60

Abstract

A transistor substrate includes a substrate and a first active pattern disposed on the substrate. The first active pattern includes a lower layer including an amorphous oxide semiconductor and having a first conductive region, a second conductive region, and a first channel region positioned the first and second conductive regions, and an upper layer disposed on the lower layer and including a crystalline oxide semiconductor. The transistor substrate further includes a first gate electrode disposed on the first active pattern and overlapping the first channel region in a plan view, a first connecting electrode contacting the first conductive region, and a second connecting electrode contacting the second conductive region. The first gate electrode and the first active pattern form a first transistor.

Anmelder

Firma

Samsung Display Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete