Lawinenphotodiode

Details

Veröffentlichungs-Nr.

EP4794482

Anmeldetag

13. Januar 2026

Veröffentlichung

19. August 2026

Rechtsraum

EP

Abstract

An avalanche photodiode (100) includes a first semiconductor layer (22) having a p-type conductivity, a barrier layer (24) stacked on a surface of the first semiconductor layer and having a p-type conductivity, a light-absorbing layer (26, 28, 30) stacked on a surface of the barrier layer opposite to the first semiconductor layer and having a p-type conductivity, a second semiconductor layer (32) stacked on a surface of the light-absorbing layer opposite to the barrier layer, a multiplication layer (38) stacked opposite to the light-absorbing layer with respect to the second semiconductor layer, and a third semiconductor layer (52) stacked opposite to the second semiconductor layer with respect to the multiplication layer and having an n-type conductivity. The first semiconductor layer, the barrier layer, the light-absorbing layer, the second semiconductor layer, and the multiplication layer form a first mesa (10). The third semiconductor layer forms a second mesa (13). The second mesa is located inside the first mesa in plan view and protrudes more than the first mesa in a thickness direction. The barrier layer has a doping concentration equal to or higher than a doping concentration of the light-absorbing layer. The second semiconductor layer has a doping concentration equal to or lower than the doping concentration of the light-absorbing layer.

Anmelder

Firma

Sumitomo Electric Industries, Ltd.

Land

🇯🇵 Japan