Spannungsabfallsteuerungsschaltung für einen Ldo-Regler mit Niedriger Leistung

EP4797035 26. August 2026

Anmelder: STMicroelectronics International N.V. 🇨🇭

Details

Veröffentlichungs-Nr.
EP4797035
Anmeldetag
4. Februar 2026
Veröffentlichung
26. August 2026
Rechtsraum
EP
IPC
G05F1/575, H02M3/07
Offizieller Volltext

Abstract

A voltage-regulator (50) provides regulated-voltage to a digital circuit (60) from a supply-voltage input (VDD). The regulator (50) includes an amplifier (51) comparing a reference-voltage (Vbg) with the regulated-voltage to control a source-gate voltage of an output-transistor (MP1). A source-gate voltage-boosting circuit improves the response of the regulator (50) for operations with high current-demands like high-frequency digital-interface communication. The boosting-circuit includes a capacitor (C) switchable connected between the supply-voltage (VDD) and either a bias current source (IB3) or the gate of the output-transistor (MP1). A phase-generator (57) controls two switches (S1, S2) through non-overlapping control-signals (φint, φsh), implementing an integration-phase and a sharing-phase. During integration, the capacitor (C) charges to a voltage above the source-to-gate voltage of the output-transistor (MP1). During sharing, this charged capacitor (C) connects to the gate of the transistor (MP1), boosting the source-to-gate voltage to increase current sourcing capability during high-frequency digital circuit operation. A clock-gating circuit (55) enables the phase-generator (57) in response to clock activation, synchronizing the boost operation with periods of increased current demand.

Anmelder

Firma
STMicroelectronics International N.V.
Land
🇨🇭 Schweiz
🇨🇭 STMicroelectronics International

Schweizer Gesellschaft des Halbleiterkonzerns STMicroelectronics, die Chips und Sensoren für Automobiltechnik, Industrie und Unterhaltungselektronik entwickelt.

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