Verfahren zur Herstellung einer Indiumbasierten Verbundoxidhalbleiterschicht mit Vorzugsweise Orientierter Kristallinität und Dünnschichttransistor mit der In-Basierten Verbundoxidhalbleiterschicht

Details

Veröffentlichungs-Nr.

EP4797905

Anmeldetag

27. Juni 2025

Veröffentlichung

23. April 2026

Rechtsraum

EP

Abstract

Provided are a method for manufacturing an In-based composite oxide semiconductor layer having preferential orientation crystallinity and a thin film transistor including the In-based composite oxide semiconductor layer. A method for crystallizing the In-based composite oxide semiconductor layer includes forming an In-based composite oxide semiconductor layer on a substrate and performing a first heat treatment on the substrate. The first heat treatment breaks metal-oxygen bonds in the In-based composite oxide semiconductor layer but maintains the amorphous state of the In-based composite oxide semiconductor layer after the first heat treatment. In-based oxide conductor patterns are formed on both ends of the In-based composite oxide semiconductor layer, and a second heat treatment is performed on the substrate to crystallize the In-based oxide conductor patterns to have bixbyite crystals. A third heat treatment is performed on the substrate to induce crystallization of the In-based composite oxide semiconductor layer by the crystallized In-based oxide conductor patterns, thereby crystallizing the In-based composite oxide semiconductor layer to be preferentially oriented in a direction.

Anmelder

Firma

IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Land

🇰🇷 Südkorea