Lichtdetektionsvorrichtung
Anmelder: Sony Semiconductor Solutions Corporation 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4797910
- Anmeldetag
- 18. Juli 2024
- Veröffentlichung
- 24. April 2025
- Rechtsraum
- EP
- IPC
- H10F39/12, H04N25/70
Abstract
The present technology relates to a light detection device that can increase a saturation charge amount and improve transfer efficiency. The light detection device includes a photoelectric conversion section that is formed in a semiconductor substrate and converts light into charge, an accumulation section that temporarily accumulates the charge, a transfer section that transfers the charge to the accumulation section, an assist section that assists at least one or both of the transfer by the transfer section and an increase in a saturation charge amount, a first electrode included in the transfer section and located on a front surface of the semiconductor substrate, and a second electrode included in the assist section and located in the semiconductor substrate. The present technology is applicable to, for example, an imaging device.
Anmelder
- Firma
- Sony Semiconductor Solutions Corporation
- Land
- 🇯🇵 Japan
Japanisches Halbleiterunternehmen mit Sitz in Atsugi, eine Tochtergesellschaft der Sony Group. Das Unternehmen entwickelt Bildsensoren, CMOS-Sensoren und Halbleiterlösungen für Kameras, Smartphones, Automobile und industrielle Anwendungen.
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