Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4797911

Anmeldetag

1. Oktober 2024

Veröffentlichung

24. April 2025

Rechtsraum

EP

IPC

H10F39/12, H01L23/12

Abstract

An object is to improve heat dissipation of a semiconductor device packaged on the basis of a WLCSP while suppressing an increase in parasitic capacitance of a through electrode.The semiconductor device includes: a first semiconductor substrate having at least one of a light-receiving layer or a circuit layer formed thereon; a support substrate on which the first semiconductor substrate is stacked, the support substrate having a thermal conductivity higher than a thermal conductivity of the first semiconductor substrate; and a through electrode extending through the support substrate to electrically connect to the first semiconductor substrate. The support substrate may have an electrical conductivity lower than that of the first semiconductor substrate. The support substrate may be an insulating substrate or a semi-insulating substrate. The semiconductor device may further include: a second semiconductor substrate having a circuit layer formed thereon, the first semiconductor substrate being stacked on the second semiconductor substrate; and an interconnect layer provided between the first semiconductor substrate and the second semiconductor substrate, and the through electrode may be electrically connected to the interconnect layer.

Anmelder

Firma

Sony Semiconductor Solutions Corporation

Land

🇯🇵 Japan

Fachgebiete