Lichtdetektionsvorrichtung und Festkörperbildgebungsvorrichtung
Anmelder: Sony Semiconductor Solutions Corporation 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4797912
- Anmeldetag
- 15. Oktober 2024
- Veröffentlichung
- 24. April 2025
- Rechtsraum
- EP
- IPC
- H10F39/18, H04N25/70
Abstract
A light detecting device according to an embodiment of the present disclosure includes a first semiconductor layer, a floating diffusion layer, a first transistor, and a first wiring. The first semiconductor layer has a first surface and a second surface opposed to each other, and includes a photoelectric converter buried in each pixel. The floating diffusion layer is buried in the first surface of the first semiconductor layer, has an upper surface flush with the first surface or protruding from the first surface, and accumulates signal charges generated at the photoelectric converter. The first transistor is provided on the first surface of the first semiconductor layer, and reads the signal charges from the floating diffusion layer. The first wiring includes polysilicon, and is coupled to the upper surface of the floating diffusion layer.
Anmelder
- Firma
- Sony Semiconductor Solutions Corporation
- Land
- 🇯🇵 Japan
Japanisches Halbleiterunternehmen mit Sitz in Atsugi, eine Tochtergesellschaft der Sony Group. Das Unternehmen entwickelt Bildsensoren, CMOS-Sensoren und Halbleiterlösungen für Kameras, Smartphones, Automobile und industrielle Anwendungen.
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