Al-Bonddraht oder Al-Bondband

Details

Veröffentlichungs-Nr.

EP4800744

Anmeldetag

27. November 2024

Veröffentlichung

5. Juni 2025

Rechtsraum

EP

IPC

H01L21/60

Abstract

To provide an Al bonding wire or an Al bonding ribbon that exhibits favorable temperature cycle reliability and favorable 1st bonding strength even in a temperature cycle test at a high temperature, which is required for next-generation SiC power semiconductor devices. The Al bonding wire or the Al bonding ribbon contains 3.0% by mass or more and 20.0% by mass or less of Si, wherein, when a Si concentration (atom%) in a depth direction from a surface of the Al bonding wire or the Al bonding ribbon is measured by X-ray photoelectron spectroscopy (XPS), a ratio Ca/Cb between an average concentration Ca of a Si element in a region a at a depth equal to or larger than 5 nm and equal to or smaller than 50 nm from the surface and an average concentration Cb of the Si element in a region b at a depth equal to or larger than 800 nm and equal to or smaller than 1200 nm from the surface is equal to or larger than 0.03 and equal to or smaller than 0.5.

Anmelder

Firmen

NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
Nippon Micrometal Corporation

Land

🇯🇵 Japan

Fachgebiete