Al-Bonddraht oder Al-Bondband

Details

Veröffentlichungs-Nr.

EP4804237

Anmeldetag

27. November 2024

Veröffentlichung

5. Juni 2025

Rechtsraum

EP

Abstract

To provide an Al bonding wire or an Al bonding ribbon that exhibits excellent temperature cycle reliability even in a temperature cycle test having a large number of cycles, which is required for next-generation SiC power semiconductors. The Al bonding wire or the Al bonding ribbon contains 3.0 % by mass or more and 20.0 % by mass or less of Si, wherein, when a crystal orientation of an Al phase in an L cross-section (cross section in a center axis direction including a center axis) of the Al bonding wire or the Al bonding ribbon is measured, an orientation ratio of a <110> crystal orientation angled at 15° or less to a direction perpendicular to the center axis (ND direction) is equal to or larger than 10% and equal to or smaller than 40%, and an orientation ratio of a <100> crystal orientation angled at 15° or less to a direction parallel to the center axis (RD direction) is equal to or larger than 15% and equal to or smaller than 50%.

Anmelder

Firmen

NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
Nippon Micrometal Corporation

Land

🇯🇵 Japan