Gan-Hemt mit Breitem Gate-Kontakt als Feldplatte und Kuehlkoerper

Details

Veröffentlichungs-Nr.

EP4804754

Anmeldetag

9. September 2025

Veröffentlichung

9. September 2026

Rechtsraum

EP

Abstract

A high electron mobility transistor (HEMT) includes a substrate including a stack of layers including a channel layer, a barrier layer on the channel layer and a two-dimensional electron gas (2DEG) region in the channel layer. An active gate is on the substrate, a drain region is laterally to a first side of the active gate, and a source region is laterally to a second, opposite side of the active gate. A gate contact is electrically coupled to the active gate and extends laterally past at least one edge of the active gate and overlaps the 2DEG region. The gate contact provides heat dissipation and a gate-connected field plate for electric field shaping.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA