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EP4804771 9. September 2026

Anmelder: Samsung Electronics Co., Ltd. 🇰🇷

Details

Veröffentlichungs-Nr.
EP4804771
Anmeldetag
28. November 2025
Veröffentlichung
9. September 2026
Rechtsraum
EP
Offizieller Volltext

Abstract

Provided is a light-emitting device including an epitaxial structure that includes first, second, and third light-emitting structures having widths increasing in a vertical direction and each including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, first, second, and third p-electrodes, at least one of which has a conductive via structure, are on the epitaxial structure and respectively contact the p-type semiconductor layers of the first, second, and third light-emitting structures, an n-common electrode including an n-common portion on the epitaxial structure, and n-electrode portions extending from the n-common portion and respectively contacting side surfaces of the n-type semiconductor layers of the first, second, and third light-emitting structures, and a separation structure separating side surfaces of the p-type semiconductor layers and the active layers of the first, second, and third light-emitting structures from the n-common electrode.

Anmelder

Firma
Samsung Electronics Co., Ltd.
Land
🇰🇷 Südkorea
🇰🇷 Samsung Electronics

Südkoreanischer Elektronikkonzern und Teil der Samsung-Gruppe. Entwickelt und produziert Halbleiter, Speicherchips, Displays, Smartphones, Unterhaltungselektronik sowie Haushaltsgeräte für den globalen Markt.

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