Dünnschichtwiderstand und Verfahren zu Seiner Herstellung

Details

Veröffentlichungs-Nr.

EP4807040

Anmeldetag

5. Dezember 2025

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

A thin film resistor and a method of forming the same are provided. The method includes forming an insulated oxide film on an upper surface of a substrate; forming a first inner electrode pair on two ends of the insulated oxide film; performing a DC multi-target hybrid sputtering operation to deposit a resistor layer on a portion of the insulated oxide film and a portion of the pair of first inner electrode; performing an RF-DC hybrid sputtering operation to deposit a doping layer over the resistor layer; performing an annealing operation so as to oxidize the doping layer to an oxidized doping film; and forming a passivation layer on the oxidized doping film. Therefore, resistance value and resistivity of the thin film resistor can be controlled.

Anmelder

Firma

Yageo Corporation

Land

🇹🇼 Taiwan