Leistungshalbleitermodul und Verwendung

Details

Veröffentlichungs-Nr.

EP4807793

Anmeldetag

10. März 2025

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

The invention relates to a power semiconductor module comprising a substrate structure (10) with a top metallization layer (20) having a first metallization area (21) and a second metallization area (22); an arrangement of semiconductor devices (30a, 30b) each having a top electrode (31a, 31b) facing away from the substrate structure (10) and a bottom electrode arranged on the first metallization area (21); and an arrangement of bond structures (50a, 50b) each configured for wiring one of the top electrodes (31a, 31b) to the second metallization area (22) along one of two or more wiring directions (W1, W2), wherein an angle (a_tot) between a first and a second wiring direction (W1, W2) of the two or more wiring directions (W1, W2) is at least 30° and up to 150°, characterized by an interconnection structure (40) configured for wiring at least two top electrodes (31a, 31b) of the arrangement of semiconductor devices (30a, 30b) directly to one another.

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz