Igbt-Vorrichtung und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP4808305

Anmeldetag

28. Oktober 2025

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

An IGBT device having a power clamping function and a method for manufacturing the same are provided. The IGBT device includes a P region (100), an N-type buffer region (210), an N-drift region (220), a P-type body region (310), N+ regions (330), P+ regions (320), front gate trench structures (500), a collector metal (800) and an emitter metal (600). The collector metal (800) is connected to SBR gate trench structures (700). The SBR gate trench structures (700) are configured to suppress a decrease in a resistance of the N- drift region (220) when an induced voltage on the IGBT device exceeds a predetermined threshold. By providing the SBR gate trench structures (700), when subjected to a large voltage surge, the IGBT device limits a decrease of a resistance of the N- drift region (220), preventing a significant increase in current flowing through the IGBT device.

Anmelder

Firma

Chongqing Alpha and Omega Semiconductor Limited

Land

🇨🇳 China