Leistungstransistor und Herstellungsverfahren dafür
EP4808306
16. September 2026
Anmelder: Wang, Pei-Ju 🇹🇼
Details
- Veröffentlichungs-Nr.
- EP4808306
- Anmeldetag
- 13. März 2026
- Veröffentlichung
- 16. September 2026
- Rechtsraum
- EP
Abstract
The present invention involves a power device and a manufacturing method thereof. The method comprising steps of providing a semiconductor substrate (12), growing stacked epitaxial layers (1012, 1013, 1014) on the semiconductor substrate, selectively etching the epitaxial layer to define an active cell region (ACR), protection area (PA) and transition structure, forming an isolation layer mask (ISO) on the epitaxial layer, performing an ion implantation process above the isolation mask on epitaxial layers (1012, 1013). Forming drain (1016), source (S1) and gate contacts.
Anmelder
- Firma
- Wang, Pei-Ju
- Land
- 🇹🇼 Taiwan