Verfahren und Vorrichtung zur Polarimetrischen Kristallographischen Fehlererkennung

Details

Veröffentlichungs-Nr.

EP4810945

Anmeldetag

18. März 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

The invention relates to a method (200) for detecting crystallographic defects in a crystalline material such as a semiconductor substrate, the defects generating local anisotropy of optical properties in the crystalline material, the method comprising the following steps:- illuminating (202) the crystalline material,- analysing (204) the polarisation of the light issued from the crystalline material by means of at least one polarisation analyser, the at least one polarisation analyser being set according to at least four different polarisation states,- measuring (206) an intensity spatial distribution of the light in the at least four different polarisation states in a field of view,- calculating (208) at least Stokes parameters S₂, S₃ based on the measured luminous intensities for the field of view,- determining (210) a retardance map based on said Stokes parameters S₂, S₃ for the field of view,- identifying (212) defects in the crystalline material based on patterns in the retardance map.The invention also relates to a polarimetric inspection device.

Anmelder

Firma

UNITY SEMICONDUCTOR

Land

🇫🇷 Frankreich