Gehäusestruktur, Leistungshalbleitermodul und Verfahren zur Herstellung einer Gehäusestruktur
Anmelder: Hitachi Energy Ltd 🇨🇭
Details
- Veröffentlichungs-Nr.
- EP4811426
- Anmeldetag
- 19. März 2025
- Veröffentlichung
- 23. September 2026
- Rechtsraum
- EP
Abstract
A housing structure (2) for a power semiconductor module (1) with at least one power semiconductor chip arranged on a mounting portion (6) is specified, comprising- a bottom portion (4) configured to surround the at least one power semiconductor chip arranged on the mounting portion (6) in lateral directions, and- a top portion (3) arranged on the bottom portion (4), wherein- the top portion (3) comprises at least one anchoring element (12) comprising- at least one shaft (13) having a main extension direction in a vertical direction, and- at least one anchoring structure (14) having a main extension direction in lateral directions arranged at the at least one shaft (13),- the bottom portion (4) comprises at least one recess (16),- the at least one shaft (13) is arranged at least partially, and the at least one anchoring structure (14) is arranged completely, in the at least one recess (16), and- a potting material (17) is at least partially arranged in the at least one recess (16).Furthermore, a power semiconductor module (1) and a method for producing a housing structure (2) are specified.
Anmelder
- Firma
- Hitachi Energy Ltd
- Land
- 🇨🇭 Schweiz
Unternehmen mit Sitz in der Schweiz, hervorgegangen aus dem japanischen Hitachi-Konzern und der früheren Energiesparte von ABB. Entwickelt Technik für Stromübertragung, -verteilung und Netzautomatisierung.
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