Fernsehdiode mit Asymmetrischer Durchbruchspannung und Verfahren zur Formung

Details

Veröffentlichungs-Nr.

EP4811954

Anmeldetag

19. März 2026

Veröffentlichung

23. September 2026

Rechtsraum

EP

IPC

H10D8/01, H10D8/00, H10D89/60

Abstract

An asymmetric transient voltage suppression (TVS) device may include a semiconductor substrate, the semiconductor substrate comprising an inner region, having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, and comprising a second polarity, opposite the first polarity. The device may further include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, the second surface region comprising a second dopant concentration, less than the first dopant concentration; and a first channel region, disposed adjacent to a perimeter of the first surface region, the first channel region comprising the second polarity, wherein the first channel region extends bellow the first surface to a channel depth that is greater than a first depth of the first surface region.

Anmelder

Firma

Littelfuse Semiconductor (Wuxi) Co., Ltd.

Land

🇨🇳 China

Fachgebiete