Graben-Mosfet-Struktur und Verfahren zu Ihrer Herstellung

Details

Veröffentlichungs-Nr.

EP4811955

Anmeldetag

4. November 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) structure and a manufacturing method thereof are provided. The trench MOSFET structure includes an N+ substrate (100), an N- drift region (110), a P-type base region (120), a source metal (400) and a drain source. An N+ source region (140) is disposed on an upper portion of the P-type base region (120). P + regions (130) are respectively disposed on two sides of the N+ source region (140). A trench gate structure is formed in the middle portion of the N+ source region (140). The trench gate structure penetrates the N+ source region (140) downwards and extends into the P-type base region (120). A bottom portion of the trench gate structure is connected to the N- drift region (110) by an N-type region (150). The N-type region (150) is N-type doped. An interlayer dielectric layer (300) is covered on the trench gate structure.

Anmelder

Firma

Chongqing Alpha and Omega Semiconductor Limited

Land

🇨🇳 China