Wechselrichter mit Oxidhalbleiter, Speichervorrichtung mit Wechselrichter und Elektronische Vorrichtung mit Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4811962

Anmeldetag

5. März 2026

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

An inverter includes a first field-effect transistor including a first channel layer, a first source/drain electrode and a second source/drain electrode disposed on opposite sides of the first channel layer, a first gate electrode facing the first channel layer, and a first gate insulating layer between the first channel layer and the first gate electrode, and a second field-effect transistor including a second channel layer, a third source/drain electrode and a fourth source/drain electrode disposed on opposite sides of the second channel layer, a second gate electrode facing the second channel layer, and a second gate insulating layer between the second channel layer and the second gate electrode. The first channel layer includes a p-type oxide semiconductor based on tellurium oxide, and the second channel layer includes an n-type oxide semiconductor based on indium oxide.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea