In 2D-Material Integrierte Halogenid-Perowskit-Dünnschichthalbleitervorrichtung und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4811982

Anmeldetag

2. Juli 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A halide perovskite thin film semiconductor device according to an embodiment of the present invention includes: a substrate; a halide perovskite layer formed on an upper surface side of the substrate; a two-dimensional material layer formed on the halide perovskite layer; an electrode unit disposed on the halide perovskite layer and including a drain electrode and a source electrode; and a polymer layer formed on the two-dimensional material layer and the electrode unit, wherein the two-dimensional material layer is characterized by being manufactured by being stacked on the halide perovskite layer by a dry transfer method.

Anmelder

Firma

Industry-Academic Cooperation Foundation, Kunsan National University

Land

🇰🇷 Südkorea