Komplementäre Halbleiterbauelemente mit Halid-Perovskit-Dünnschichten

Details

Veröffentlichungs-Nr.

EP4811983

Anmeldetag

2. Juli 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

IPC

H10K10/46, H10K85/50

Abstract

A halide perovskite-based complementary semiconductor device according to an embodiment of the present invention includes a substrate, a two-dimensional material layer formed on an upper surface side of the substrate and including a hole injection layer and an electron injection layer, a halide perovskite layer formed on the two-dimensional material layer, and an electrode layer formed on the halide perovskite layer and including a drain electrode, an output electrode, and a source electrode.

Anmelder

Firma

Industry-Academic Cooperation Foundation, Kunsan National University

Land

🇰🇷 Südkorea

Fachgebiete