Leistungshalbleitermodul und Montageverfahren

Details

Veröffentlichungs-Nr.

EP4815035

Anmeldetag

25. März 2025

Veröffentlichung

30. September 2026

Rechtsraum

EP

IPC

H01L25/07, H01L23/36

Abstract

The invention relates to a power semiconductor module (1) comprising an electrically conducting base plate (110) and an electrically conducting top plate (120) arranged parallel to each other, a plurality of semiconductor chips (150) arranged on the baes plate (110) facing the top plate, a plurality of electrical contacts (130), each arranged between the top plate (120) and one of the plurality of semiconductor chips (150), electrically connecting the plurality of semiconductor chips (150) in parallel, and a multi-layered structure (140) comprising a stack of electrically conducting elements (141), wherein the plurality of the electrical contacts (130) are interconnected by the multi-layered structure (140), and each element (141) of the multi-layered structure (140) is mechanically and/or electrically connected to at least one of electrical contacts (130).

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz

Fachgebiete