Mems-Vorrichtung
Anmelder: Infineon Technologies AG 🇩🇪
Details
- Veröffentlichungs-Nr.
- EP4815505
- Anmeldetag
- 28. März 2025
- Veröffentlichung
- 30. September 2026
- Rechtsraum
- EP
- IPC
- H04R19/04
Abstract
MEMS device (10) comprising: a transducer element (12) having a first deflectable membrane structure (14), a rigid electrode structure (16) and a second deflectable membrane structure (18) in a vertically spaced configuration, wherein the rigid electrode structure (16) is arranged between the first and second deflectable membrane structure (14, 18), the first and second deflectable membrane structure (14, 18) each comprise a deflectable portion (14-1, 18-1), and wherein the deflectable portion (14-1) of the first deflectable membrane structure (14) and the deflectable portion (18-1) of the second deflectable structure (18) are mechanically coupled by means of mechanical connection elements (20) to each other and are mechanically decoupled from the rigid electrode structure (16); a carrier element (22) for supporting the transducer element (12); a plurality of first clamping structures (24-1, ..., 24-#) for mechanically connecting the transducer element (12) to the carrier element (22) at edge clamping regions (26-1, ..., 26-#) of the transducer element (12); an elongation structure (32) laterally extending from unclamped edge regions (34-1, ..., 34-#) of the transducer element (12); a plurality of second clamping structures (36-1, ..., 36-#) for mechanically connecting the elongation structure (30) to the carrier element (22) at edge clamping regions (38-1, ..., 38-#) of the elongation structure (32); and wherein the elongation structure (32) comprises first elongation elements (40) which extend at least partially in the same plane as the first deflectable membrane structure (14) from the transducer element (12) to the second clamping structures (36-1, ..., 36-#), or wherein the elongation structure (32) comprises second elongation elements (42) which extend at least partially in the same plane as the second deflectable membrane structure (18) from the transducer element (12) to the second clamping structures (36-1, ..., 36-#).
Anmelder
- Firma
- Infineon Technologies AG
- Land
- 🇩🇪 Deutschland
Deutscher Halbleiterkonzern mit Sitz in Neubiberg bei München, hervorgegangen aus Siemens. Entwickelt und fertigt Halbleiter und Systemlösungen für Automobil-, Industrie- und Sicherheitsanwendungen.
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Fachgebiete
Schoppe, Zimmermann, Stöckeler, Zinkler, Schenk & Partner mbB berät von München aus Unternehmen und Forschungseinrichtungen aus aller Welt, mit technischem Schwerpunkt auf Audio- und Videokodierung, Mobilfunk, künstlicher Intelligenz und Halbleitertechnik.