Verfahren zur Herstellung eines Siliciumcarbids auf einem Isolator

Details

Veröffentlichungs-Nr.

EP4819197

Anmeldetag

3. April 2025

Veröffentlichung

7. Oktober 2026

Rechtsraum

EP

Abstract

The invention relates to a method for manufacturing a silicon carbide on insulator, said method comprising the following steps:a) providing a substrate,b) providing a silicon carbide structure,at least one of the substrate and of the silicon carbide structure being provided with an electrically insulating layer;c) arranging the silicon carbide structure against the substrate with the electrically insulating layer between them so as to form a contact between them;d) focusing a laser beam towards the electrically insulating layer to weld the silicon carbide structure to the substrate, the laser beam being controlled to define one or several welded areas separated by one or several non-welded areas.The invention also relates to a method for manufacturing SiCOI photonic structures that may contain one or several color centers, from a SiCOI structure obtained with the manufacturing method of the invention.

Anmelder

Firmen

Université de Strasbourg
Centre National de la Recherche Scientifique
Institut National des Sciences Appliquées de Strasbourg
Industrialisation des Recherches sur les Procédés et les Applications du Laser

Land

🇫🇷 Frankreich