Bidirektionaler Thyristor, Bypass-Schaltung und Verfahren zur Herstellung des Bidirektionalen Thyristor
Anmelder: Hitachi Energy Ltd 🇨🇭
Details
- Veröffentlichungs-Nr.
- EP4819790
- Anmeldetag
- 2. April 2025
- Veröffentlichung
- 7. Oktober 2026
- Rechtsraum
- EP
Abstract
The invention relates to a semiconductor device, a bypass circuit comprising the semiconductor device and a method manufacturing the semiconductor device. The semiconductor device (1) comprising a first thyristor structure (10) and a second thyristor structure (20) which are antiparallel connected and share a common semiconductor body (2). A first main electrode (51) functions as a cathode (11) for the first thyristor structure (10) and an anode (22) for the second thyristor structure (20). A second main electrode (52) functions as an anode (12) for the first thyristor structure and a cathode (21) for the second thyristor structure (20). The semiconductor body further comprises a first trigger region (61) and a first emitter region (71) facing the first gate and main electrodes, a second trigger region (62) and a second emitter region (72) facing the second gate and main electrodes to facilitate self-destruction of the thyristor structures.
Anmelder
- Firma
- Hitachi Energy Ltd
- Land
- 🇨🇭 Schweiz
Unternehmen mit Sitz in der Schweiz, hervorgegangen aus dem japanischen Hitachi-Konzern und der früheren Energiesparte von ABB. Entwickelt Technik für Stromübertragung, -verteilung und Netzautomatisierung.
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